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3V to 12V Current-Limiting Hot-Swap Controllers
with Autoretry, DualSpeed/BiLevel Fault Protection
ABSOLUTE MAXIMUM RATINGS
IN to GND ............................................................................+15V
STAT, OUTC, LLMON, AUXVCC to GND ...............-0.3V to +14V
GATE to GND ..............................................-0.3V to (V IN + 8.5V)
GATE to LLMON (Note 1).........................................-1V to +8.5V
INC, ON to GND (Note 2) .........................................-1V to +14V
CEXT to GND ...............................................-8.5V to (V IN + 0.3V)
CSPD, CTON,
REF to GND ...........-0.3V to the lower of (V IN + 0.3V) or +12V
VSENSE, RTH, CTIM to GND.......................-0.3V to (V IN + 0.3V)
Current into INC, ON (Note 2) ............................................±2mA
Current into Any Other Pin ...............................................±50mA
Continuous Power Dissipation (T A = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)..................471mW
16-Pin QSOP (derate 8.3mW/°C above +70°C)...........667mW
16-Pin SO (derate 8.7mW/°C above +70°C)................696mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: GATE can be pulled below LLMON, but current must be limited to 2mA.
Note 2: INC and ON can be pulled below ground. Limiting the current to 2mA ensures that these pins are never lower than about -0.8V.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = +2.7V to +13.2V, T A = -40°C to +85°C, unless otherwise noted. Typical values are at V IN = +5V and T A = +25°C.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
Input Voltage Range
V IN
2.7
13.2
V
Supply Current
I Q
V ON = V IN
0.6
1
mA
CURRENT CONTROL
Slow Comparator Threshold
Slow Comparator Response
Time
V SC,TH
t CSPD
V IN - V SENSE
C SPD = floating
C SPD = 100nF to GND
T A = +25 ° C
T A = T MIN to T MAX
45
43.5
10
10
50
20
20
55
56
40
40
mV
μ s
ms
5k Ω on
T A = +25 ° C
45
50
55
RTH to
V IN
T A = T MIN to T MAX
43.5
56
Fast Comparator Threshold
V FC,TH
MAX4273
only
75k Ω
on RTH
T A = +25 ° C
675
750
825
mV
to V IN
T A = T MIN to T MAX
650
840
RTH = GND
MAX4271/MAX4272
180
200
220
Fast Comparator Response
Time
t FCD
10mV overdrive, from overload condition to
gate discharging
350
ns
SENSE Input Bias Current
I B,SENSE
V SENSE = V IN
0.2
10
μ A
MOSFET DRIVER
Startup Period
(Notes 4, 5)
Gate Charge Current
t START
I GATE
MAX4271/MAX4272 C TIM = 100nF
MAX4273 C TON = 100nF
No capacitor
GATE = IN (Note 6)
21
21
31
31
5.5
100
41
41
ms
μ s
μ A
2
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